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PIN diodes covering the wavelength range
900nm to 2100nm. Devices are available optimised for
steady state measurements with large active area or
optimised for time resolved luminescence measurements with
rise times of less than 10ns
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Featuring G8422/G8372/G5852 series of InGaAs PIN
photodiodes
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Cut-off wavelengths up to 2100nm
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Two stage TE cooler
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Amplifier and bias power supply
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Mechanical / optical coupling flange to the monochromator with focusing optics included
The InGsAs detection systems have been
specifically designed for optimum performance over the
wavelengths 900 – 2100nm. We can offer detector assemblies
that are supplied with InGaAs PIN diodes with active area
1mm, 0.3mm or 0.1mm. The larger area detectors are more
optimum for steady state luminescence application, whereas
the smaller area units exhibit higher cut-off frequencies
and as such, are more optimum for time resolved
luminescence measurements.
For steady state applications the diode is mounted in a
two stage TE cooled housing with collection/focusing
optics chopper and lock-in. For time resolved
applications, the diode is supplied in a two stage
TE-cooled housing and with a digitising oscilloscope for
data collection and averaging. The F900 software comes
with oscilloscope transfer mode for data download from the
oscilloscope for subsequent analysis.
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